3

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Year:
2001
Language:
english
File:
PDF, 188 KB
english, 2001
15

The progress in MOCVD and MBE in China

Year:
1991
Language:
english
File:
PDF, 1.21 MB
english, 1991
17

Energy bands and acceptor binding energies of GaN

Year:
1999
Language:
english
File:
PDF, 110 KB
english, 1999
18

Hydrogen-dependent lattice dilation in GaN

Year:
2000
Language:
english
File:
PDF, 69 KB
english, 2000